Product Line Card
Headquartered in the Netherlands, Nexperia is a global semiconductor company with a rich European history and over 12,500 employees across Europe, Asia, and the United States. As a leading expert in the development and production of essential semiconductors, Nexperia’s components enable the basic functionality of virtually every electronic design in the world – from automotive and industrial to mobile and consumer applications.
The company serves a global customer base, shipping more than 100 billion products annually. These products are recognized as benchmarks in efficiency – in process, size, power and performance. Nexperia's commitment to innovation, efficiency and stringent industry requirements is evident in its extensive IP portfolio, its expanding product range and its certification to IATF 16949, ISO 9001, ISO 14001 and ISO 45001 standards.
Products
Low voltage e-mode GaN FETs
Optimum flexibility for high-power
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for high-power <200 V applications. Offering superior switching performance due very low QC and QOSS values. Enabling faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for high-power <200 V applications. Offering superior switching performance due very low QC and QOSS values. Enabling faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
Optimum flexibility for high-power
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for high-power <200 V applications. Offering superior switching performance due very low QC and QOSS values. Enabling faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for high-power <200 V applications. Offering superior switching performance due very low QC and QOSS values. Enabling faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
650 V cascode GaN FETs
Performance, efficiency, reliability
The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.
The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.
Performance, efficiency, reliability
The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.
The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.
Bi-directional GaN FETs
Unconventional innovative GaN solution in BMS
Nexperia’s bi-directional GaN FETs are ideal for power applications where voltage blocking and current conduction are important functions. For example, they deliver a superior solution when replacing conventional back-to-back silicon MOSFETs in Battery Management Systems (BMS). Guaranteeing low conduction losses and ultra-high switching speed capability as well as delivering significant space savings (smallest footprint). They also bring these benefits when applied as over-voltage protection (OVP), switching circuits for multiple power sources and high side load switches in bidirectional converters.
Nexperia’s bi-directional GaN FETs are ideal for power applications where voltage blocking and current conduction are important functions. For example, they deliver a superior solution when replacing conventional back-to-back silicon MOSFETs in Battery Management Systems (BMS). Guaranteeing low conduction losses and ultra-high switching speed capability as well as delivering significant space savings (smallest footprint). They also bring these benefits when applied as over-voltage protection (OVP), switching circuits for multiple power sources and high side load switches in bidirectional converters.
Unconventional innovative GaN solution in BMS
Nexperia’s bi-directional GaN FETs are ideal for power applications where voltage blocking and current conduction are important functions. For example, they deliver a superior solution when replacing conventional back-to-back silicon MOSFETs in Battery Management Systems (BMS). Guaranteeing low conduction losses and ultra-high switching speed capability as well as delivering significant space savings (smallest footprint). They also bring these benefits when applied as over-voltage protection (OVP), switching circuits for multiple power sources and high side load switches in bidirectional converters.
Nexperia’s bi-directional GaN FETs are ideal for power applications where voltage blocking and current conduction are important functions. For example, they deliver a superior solution when replacing conventional back-to-back silicon MOSFETs in Battery Management Systems (BMS). Guaranteeing low conduction losses and ultra-high switching speed capability as well as delivering significant space savings (smallest footprint). They also bring these benefits when applied as over-voltage protection (OVP), switching circuits for multiple power sources and high side load switches in bidirectional converters.
650 V e-mode GaN FETs
Optimized balance of voltage and power
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
Optimized balance of voltage and power
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
NGW75T65M3DFP
650 V, 75 A trench field-stop IGBT with full rated silicon diode
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
650 V, 75 A trench field-stop IGBT with full rated silicon diode
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
NGW75T65H3DFP
650 V, 75 A trench field-stop IGBT with full rated silicon diode
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
650 V, 75 A trench field-stop IGBT with full rated silicon diode
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
NGW75T65H3DF
IGBT with trench construction, fast recovery diode
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
IGBT with trench construction, fast recovery diode
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
NGW60T65M3DFP
650 V, 60 A trench field-stop IGBT with full rated silicon diode
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 60 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 60 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
650 V, 60 A trench field-stop IGBT with full rated silicon diode
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 60 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 60 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
Address：15C, 15/F, Sanhang Technology Building, Northwestern Polytechnical University, No.45 Gaoxin Nanjiu Road, Nanshan District, Shenzhen, China
Phone：0755-8612 8820
